Floating-gate Memory
Floating-Gate Memory is a type of non-volatile semiconductor memory device in which data is stored by trapping electrical charge on an electrically isolated gate electrode, enabling persistent information retention through controlled electron tunneling and injection mechanisms.
673
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29.9K
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3K
Authors
490
Institutions
Publications per year
2017–2026
149
Parents
673
R. Bez, E. Camerlenghi, Alberto Modelli et al. · Proceedings of the IEEE · 2003 · 822 citations
Engineering, Computer Engineering, Electrical Engineering +17
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University of Padua
Padua, Italy
24 h-index
116 publications
3.7K citations
STMicroelectronics (Italy)
Milan, Italy
22 h-index
69 publications
5.9K citations
Intel (United States)
Santa Clara, United States
19 h-index
109 publications
5.4K citations
Samsung (South Korea)
Seoul, South Korea
16 h-index
198 publications
10.6K citations
IMEC
Leuven, Belgium
15 h-index
144 publications
3.5K citations

Chinese Academy of Sciences
Beijing, China
15 h-index
107 publications
5.3K citations
Istituto Nazionale di Fisica Nucleare
Rome, Italy
14 h-index
46 publications
1.9K citations
Toshiba (Japan)
Tokyo, Japan
13 h-index
132 publications
3.5K citations
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71 publications · 2.7K citations
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40 publications · 1.7K citations
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57 publications · 2.1K citations
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19 publications · 734 citations
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