Floating-gate Memory

Floating-Gate Memory is a type of non-volatile semiconductor memory device in which data is stored by trapping electrical charge on an electrically isolated gate electrode, enabling persistent information retention through controlled electron tunneling and injection mechanisms.

673

Publications

29.9K

Citations

3K

Authors

490

Institutions

Publications per year

2017–2026

149

Authors

3K

  1. AP
    A. Paccagnella

    University of Padua, Italy

    41 publications · 1.5K citations

    25

    h-index

  2. AV
    A. Visconti

    University of Padua, Italy

    36 publications · 2K citations

    23

    h-index

  3. GC
    G. Cellere

    University of Padua, Italy

    23 publications · 924 citations

    19

    h-index

  4. MB
    Marta Bagatin

    University of Padua, Italy

    25 publications · 827 citations

    18

    h-index

  5. SG
    Simone Gerardin

    University of Padua, Italy

    25 publications · 827 citations

    18

    h-index

1–5 of 3K

Venues

  1. IEEE Transactions on Electron Devices

    71 publications · 2.7K citations

    29

    h-index

  2. IEEE Transactions on Nuclear Science

    40 publications · 1.7K citations

    26

    h-index

  3. Applied Physics Letters

    57 publications · 2.1K citations

    24

    h-index

  4. IEEE Electron Device Letters

    39 publications · 1.2K citations

    21

    h-index

  5. IEEE Journal of Solid-State Circuits

    19 publications · 734 citations

    14

    h-index

1–5