The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

Engineering, Materials Science, Physics +17

Negative Field-Effect Mobility on (100) Si Surfaces

F. F. Fang, W. E. Howard · Physical Review Letters · 1966 · 525 citations

Natural Sciences, Materials Science, Physics +14

Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson et al. · Journal of Applied Physics · 1999 · 435 citations

Engineering, Materials Science, Physics +17

High Al-content AlGaN/GaN MODFETs for ultrahigh performance

Yifeng Wu, B.P. Keller, P. Fini et al. · IEEE Electron Device Letters · 1998 · 280 citations

Engineering, Electrical Engineering, Materials Science +17