Jinyu Ni

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Yuanzheng Yue, Yue Hao, Jincheng Zhang et al. · IEEE Electron Device Letters · 2008 · 140 citations

Engineering, Electrical Engineering, Materials Science +17

The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method

Qian Feng, Limei Li, Yue Hao et al. · Solid-State Electronics · 2009 · 56 citations

Engineering, Electrical Engineering, Materials Science +16

Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates

Lei Pan, Xun Dong, Zhonghui Li et al. · Applied Surface Science · 2018 · 44 citations

Engineering, Materials Engineering, Materials Science +14

The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content

Jinfeng Zhang, Jincheng Zhang, Jinyu Ni · Science in China Series F Information Sciences · 2008 · 43 citations

Engineering, Materials Engineering, Materials Science +16

GaN MOS-HEMT Using Ultra-Thin Al ₂ O ₃ Dielectric Grown by Atomic Layer Deposition

Yue Yuanzheng, Jincheng Zhang, Xiaohua Ma et al. · Chinese Physics Letters · 2007 · 41 citations

Engineering, Electrical Engineering, Materials Science +17