Yue Yuanzheng

GaN MOS-HEMT Using Ultra-Thin Al ₂ O ₃ Dielectric Grown by Atomic Layer Deposition

Yue Yuanzheng, Jincheng Zhang, Xiaohua Ma et al. · Chinese Physics Letters · 2007 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

A study on Al₂O₃passivation in GaN MOS-HEMT by pulsed stress

Yue Yuanzheng, Jincheng Zhang, Jinyu Ni et al. · Chinese Physics B · 2008 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Fragile-to-Strong Transition in Al-Ni-M (M=La, Pr, Nd) Metallic Glasses

Chunzhi Zhang, Lina Hu, Bian Xiufang et al. · Chinese Physics Letters · 2010 · 13 citations

Natural Sciences, Materials Science, Physics +14

The improvement of Al₂O₃/AlGaN/GaN MISHEMT performance by N₂plasma pretreatment

Yuan Tian, Zhiwei Bi, Yue Yuanzheng et al. · Chinese Physics B · 2009 · 12 citations

Engineering, Electrical Engineering, Materials Science +17