Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates - Concepedia

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Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates

44

Citations

27

References

2018

Year

Lei Pan, Xun Dong, Zhonghui Li, Weike Luo, Jinyu Ni

Applied Surface Science

Wide-bandgap SemiconductorAluminium NitrideEngineeringPhysicsSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceAlgan/gan HeterostructureCategoryiii-v SemiconductorOptoelectronicsAln Nucleation Layer

References

	Year	Citations

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