Xun Dong

Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

Yuechan Kong, Jianjun Zhou, Cen Kong et al. · IEEE Electron Device Letters · 2014 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates

Lei Pan, Xun Dong, Zhonghui Li et al. · Applied Surface Science · 2018 · 44 citations

Engineering, Materials Engineering, Materials Science +14

Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD

Weike Luo, Liang Li, Zhonghui Li et al. · Journal of Alloys and Compounds · 2016 · 43 citations

Natural Sciences, Materials Engineering, Materials Science +15

Improvement of breakdown and current collapse characteristics of GaN HEMT with a polarization-graded AlGaN buffer

Chuanhao Li, Zhonghui Li, Daqing Peng et al. · Semiconductor Science and Technology · 2015 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Tao Gao, Ruimin Xu, Yuechan Kong et al. · Applied Physics Letters · 2015 · 23 citations

Engineering, Electrical Engineering, Materials Science +17