Jianjun Zhou

A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz

Xinxin Yu, Jianjun Zhou, Chengjun Qi et al. · IEEE Electron Device Letters · 2018 · 129 citations

Engineering, Semiconductor Device, Semiconductors +16

3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

Tingting Liu, Yuechan Kong, Lishu Wu et al. · IEEE Electron Device Letters · 2017 · 94 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +8

Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs

Yuechan Kong, Jianjun Zhou, Cen Kong et al. · IEEE Electron Device Letters · 2014 · 49 citations

Electrical Engineering, Engineering, Electronic Engineering +8

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

Wen Wang, Xinxin Yu, Jianjun Zhou et al. · IEEE Journal of the Electron Devices Society · 2018 · 43 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

Qingzhi Wu, Yuehang Xu, Jianjun Zhou et al. · ECS Journal of Solid State Science and Technology · 2017 · 36 citations · Full text

Wide-bandgap Semiconductor, Finite Element Method, Electrical Engineering +12