Yuechan Kong

A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz

Xinxin Yu, Jianjun Zhou, Chengjun Qi et al. · IEEE Electron Device Letters · 2018 · 129 citations

Engineering, Semiconductor Device, Semiconductors +16

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

Yun Wu, Xuming Zou, Menglong Sun et al. · ACS Applied Materials & Interfaces · 2016 · 110 citations

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

Kai Zhang, Yuechan Kong, Guangrun Zhu et al. · IEEE Electron Device Letters · 2017 · 103 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

Tingting Liu, Yuechan Kong, Lishu Wu et al. · IEEE Electron Device Letters · 2017 · 94 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +8

Thermal simulation of high power GaN-on-diamond substrates for HEMT applications

Huaixin Guo, Yuechan Kong, Tangsheng Chen · Diamond and Related Materials · 2016 · 64 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7