Kai Zhang

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

Kai Zhang, Yuechan Kong, Guangrun Zhu et al. · IEEE Electron Device Letters · 2017 · 109 citations

Engineering, Electrical Engineering, Materials Science +17

A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Tao Zhang, Jinfeng Zhang, Shengrui Xu et al. · IEEE Electron Device Letters · 2019 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Study of surface leakage current of AlGaN/GaN high electron mobility transistors

Yonghe Chen, Kai Zhang, Mengyi Cao et al. · Applied Physics Letters · 2014 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V

Tao Zhang, Jincheng Zhang, Hong Zhou et al. · IEEE Electron Device Letters · 2018 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

Wen Wang, Xinxin Yu, Jianjun Zhou et al. · IEEE Journal of the Electron Devices Society · 2018 · 47 citations · Full text

Engineering, Electrical Engineering, Materials Science +17