A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Abstract

In this letter, we report on demonstrating high-performance lateral GaN Schottky barrier diode (SBD) on silicon substrate with low turn-on voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ), high breakdown voltage (BV) with low reverse leakage current (IR), and high power figure of merit (P-FOM) through anode engineering technique. Lateral GaN SBD with anode-cathode distance (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">AC</sub> ) of 25 μm demonstrates a V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> = 0.38 V, a BV of >3 kV at a IR of 10μA/mm and differential specific ON-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,sp</sub> ) of 2.94 mQ ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , yielding a high P-FOM of more than 3 GW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . To the best of our knowledge, this P-FOM is the highest value among all the GaN SBDs on any substrates. Combining with 5 A forward current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</sub> ) and reverse BV > 2 kV of a large periphery device with perimeter of 20 mm, GaN SBD with anode engineering technique shows its great promise for next generation power electronics.