A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

Kui Dang, Jincheng Zhang, Hong Zhou, +8

IEEE Transactions on Power Electronics

Electrical EngineeringWireless Power TransmissionEngineeringSingle DiodeLateral Gan Sbd +12

A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Tao Zhang, Jinfeng Zhang, Shengrui Xu, +11

IEEE Electron Device Letters

SemiconductorsElectrical EngineeringLow Leakage CurrentEngineeringLateral Gan Sbd +11

Dark Matter Search Results from <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>1.54</mml:mn><mml:mtext> </mml:mtext><mml:mtext> </mml:mtext><mml:mi>Tonne</mml:mi><mml:mo>·</mml:mo><mml:mi>Year</mml:mi></mml:mrow></mml:math> Exposure of PandaX-4T

Zihao Bo, Wei Chen, Xun Chen, +97

Physical Review Letters

EngineeringCosmic Neutrino BackgroundNuclear DataObservational PhysicsMath Xmlns +14

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

Kui Dang, Jincheng Zhang, Hong Zhou, +9

IEEE Transactions on Industrial Electronics

Wide-bandgap SemiconductorEngineeringCircuit ConstructionPower ElectronicsRf Semiconductor +15

A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V

Tao Zhang, Jincheng Zhang, Hong Zhou, +10

IEEE Electron Device Letters

Wide-bandgap SemiconductorEngineeringTungsten AnodeSemiconductor DeviceSemiconductors +14

High-Performance E-Mode <i>p</i>-Channel GaN FinFET on Silicon Substrate With High <i>I</i> _ON/<i>I</i> _OFF and High Threshold Voltage

Hanghai Du, Zhihong Liu, Lu Hao, +5

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsHigh Threshold Voltage +8

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm⁻²

Tao Zhang, Jincheng Zhang, Hong Zhou, +10

Applied Physics Express

Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringMo Anode +11

Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer

Tao Zhang, Yueguang Lv, Li Ruohan, +5

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +10

Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures

Weihang Zhang, JunShuai Xue, Li Zhang, +4

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesHigh Temperature Characteristics +11

Comprehensive Annealing Effects on AlGaN/GaN Schottky Barrier Diodes With Different Work-Function Metals

Tao Zhang, Yi Wang, Yanni Zhang, +7

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorEngineeringDifferent Work-function MetalsSemiconductorsElectronic Devices +14