Tao Zhang

A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

Kui Dang, Jincheng Zhang, Hong Zhou et al. · IEEE Transactions on Power Electronics · 2019 · 114 citations

Electrical Engineering, Wireless Power Transmission, Engineering +14

A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Tao Zhang, Jinfeng Zhang, Shengrui Xu et al. · IEEE Electron Device Letters · 2019 · 66 citations

Semiconductors, Electrical Engineering, Low Leakage Current +13

Dark Matter Search Results from <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>1.54</mml:mn><mml:mtext> </mml:mtext><mml:mtext> </mml:mtext><mml:mi>Tonne</mml:mi><mml:mo>·</mml:mo><mml:mi>Year</mml:mi></mml:mrow></mml:math> Exposure of PandaX-4T

Zihao Bo, Wei Chen, Xun Chen et al. · Physical Review Letters · 2025 · 62 citations · Full text

Engineering, Cosmic Neutrino Background, Nuclear Data +16

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

Kui Dang, Jincheng Zhang, Hong Zhou et al. · IEEE Transactions on Industrial Electronics · 2019 · 53 citations

Wide-bandgap Semiconductor, Engineering, Circuit Construction +17

A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V

Tao Zhang, Jincheng Zhang, Hong Zhou et al. · IEEE Electron Device Letters · 2018 · 51 citations

Wide-bandgap Semiconductor, Engineering, Tungsten Anode +16