Kui Dang

Ultra-wide bandgap semiconductor Ga2O3 power diodes

Jincheng Zhang, Pengfei Dong, Kui Dang et al. · Nature Communications · 2022 · 562 citations · Full text

Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

Zhuangzhuang Hu, Hong Zhou, Qian Feng et al. · IEEE Electron Device Letters · 2018 · 166 citations

More Than 3, Electrical Engineering, Engineering +7

Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities

Yuanjie Lv, Yuangang Wang, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2020 · 156 citations

Wide-bandgap Semiconductor, Engineering, Wide-bandgap P-type Niox +16

High-Performance Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With Implanted Edge Termination

Hong Zhou, Qian Feng, Jing Ning et al. · IEEE Electron Device Letters · 2019 · 143 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11

A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

Kui Dang, Jincheng Zhang, Hong Zhou et al. · IEEE Transactions on Power Electronics · 2019 · 114 citations

Electrical Engineering, Wireless Power Transmission, Engineering +14