IEEE Electron Device Letters · 2014 · 52 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesMixed-signal IntegrationWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesCurrent GainCutoff FrequencyGallium Nitride (Gan) MaterialsGallium Nitride Microwave Integrated CircuitsGan-based High-frequency DevicesHigh-electron-mobility TransistorsSmall-signal GainTransconductance
Monolithic integration of enhancement/depletion (E/D)-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) are demonstrated for mixed signal applications. The gate length for the E-mode and D-mode devices are 0.2 μm and 0.35 μm, respectively, and drain current of 496 (Vgs=+5 V) and 720 mA/mm (Vgs=0 V) with a peak transconductance of 147 and 131 mS/mm are measured. Small-signal measurements result matched current-gain cutoff frequency (fT)/maximum oscillation frequency (fmax) of 29.9/55.2 GHz for the E-mode and 27.5/47.5 GHz for the D-mode devices. Direct-coupled FET logic E/D MIS-HEMT inverter and 51-stage ring oscillator are fabricated. The incorporation of gate dielectric enables the inverter a large logic voltage swing of 3.71 V at a supply voltage VDD of 5 V. The 51-stage ring oscillator implemented with 106 transistors shows an oscillation frequency of 427.6 MHz at VDD=5 V, corresponding to a stage delay of 23 ps.
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Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
W. Lanford, Tsuyoshi Tanaka, Y. Otoki et al. · Electronics Letters · 2005 · 251 citations
GaN enhancement/depletion-mode FET logic for mixed signal applications
M. Micovic, T. Tsen, Ming Hu et al. · Electronics Letters · 2005 · 74 citations
Engineering, Computer Engineering, Electrical Engineering +13