Concepedia

Surface Channel Devices

Surface Channel Device is a type of charge-coupled device in which charge packets are transported along a narrow channel near the semiconductor-insulator interface, distinguished from buried channel devices by the absence of a subsurface conducting layer, thereby making charge transfer highly sensitive to interface states and surface defects.

102

Publications

4.2K

Citations

454

Authors

130

Institutions

Publications per year

2017–2026

3

Variants

Surface Channel Ccds

Parents

Publications

102

Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

J.J. Welser · IEEE Electron Device Letters · 1994 · 362 citations

, , +17

Fabrication and analysis of deep submicron strained-Si n-MOSFET's

K. Rim, Judy L. Hoyt, J. F. Gibbons · IEEE Transactions on Electron Devices · 2000 · 361 citations

, , +17

Design tradeoffs between surface and buried-channel FET's

G.J. Hu, Richard H. Bruce · IEEE Transactions on Electron Devices · 1985 · 315 citations

, , +17

Germanium channel MOSFETs: Opportunities and challenges

Huiling Shang, Martin M. Frank, E. P. Gusev et al. · IBM Journal of Research and Development · 2006 · 186 citations

, , +17

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

C. W. Leitz, M. T. Currie, Minjoo Larry Lee et al. · Journal of Applied Physics · 2002 · 169 citations

, , +17

1–5 of 102

Authors

454

  1. EK
    E. Kohn

    Universität Ulm, Germany

    6 publications · 134 citations

    6

    h-index

  2. GC
    G. Conte

    Roma Tre University, Italy

    4 publications · 94 citations

    4

    h-index

  3. EG
    E. Giovine

    Istituto di Fotonica e Nanotecnologie, Italy

    4 publications · 94 citations

    4

    h-index

  4. DK
    Daniel Kueck

    Universität Ulm, Germany

    4 publications · 93 citations

    4

    h-index

  5. VR
    Victor Ralchenko

    Prokhorov General Physics Institute, Russia

    3 publications · 63 citations

    3

    h-index

1–5 of 454

Institutions

130

  1. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    8 h-index

    31 publications

    1.8K citations

  2. Universität Ulm

    Ulm, Germany

    6 h-index

    24 publications

    536 citations

  3. Massachusetts Institute of Technology

    Cambridge, United States

    4 h-index

    10 publications

    1.5K citations

  4. Texas Instruments (United States)

    Dallas, United States

    4 h-index

    8 publications

    267 citations

  5. Roma Tre University

    Rome, Italy

    4 h-index

    14 publications

    398 citations

  6. IBM (United States)

    Armonk, United States

    4 h-index

    13 publications

    1.4K citations

  7. NTT (Japan)

    Tokyo, Japan

    3 h-index

    5 publications

    60 citations

  8. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    3 h-index

    30 publications

    576 citations

1–8 of 130

Venues

  1. IEEE Transactions on Electron Devices

    22 publications · 1.3K citations

    16

    h-index

  2. IEEE Electron Device Letters

    9 publications · 516 citations

    9

    h-index

  3. Diamond and Related Materials

    7 publications · 190 citations

    7

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 4 publications · 48 citations

    4

    h-index

  5. Applied Physics Letters

    4 publications · 224 citations

    4

    h-index

1–5