Daniel Kueck

Performance and ruggedness of 1200V SiC — Trench — MOSFET

Dethard Peters, Ralf Siemieniec, Thomas Aichinger et al. · 2017 · 145 citations

Electrical Engineering, Semiconductor Device, Engineering +10

AlN as passivation for surface channel FETs on H-terminated diamond

Daniel Kueck, P. Leber, Anja Schmidt et al. · Diamond and Related Materials · 2010 · 38 citations

Materials Science, Semiconductor Technology, Electrical Engineering +7

Analysis of passivated diamond surface channel FET in dual-gate configuration — Localizing the surface acceptor

Daniel Kueck, Anja Schmidt, Andrej Denisenko et al. · Diamond and Related Materials · 2009 · 23 citations

Semiconductor Technology, Electrical Engineering, Engineering +6

1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance

Dethard Peters, Thomas Aichinger, Thomas Basler et al. · Materials science forum · 2017 · 23 citations

Coolsictm Mosfet, Electrical Engineering, Engineering +12

Surface-channel MESFET with boron-doped contact layer

Daniel Kueck, H. El-Hajj, A. Kaiser et al. · Diamond and Related Materials · 2007 · 21 citations

Electrical Engineering, Engineering, Surface-channel Mesfet +5