Pre-amorphization Implantation

Pre-Amorphization Implantation is a semiconductor fabrication technique that involves the intentional implantation of heavy ions to create an amorphous layer in a crystalline substrate prior to subsequent dopant implantation, thereby minimizing channeling effects and enhancing dopant activation uniformity.

69

Publications

1.8K

Citations

360

Authors

94

Institutions

Publications per year

2017–2026

3

Parents

Authors

360

  1. MS
    Marc Schaekers

    IMEC, Belgium

    4 publications · 172 citations

    4

    h-index

  2. NC
    Nadine Collaert

    IMEC, Belgium

    4 publications · 172 citations

    4

    h-index

  3. NH
    Naoto Horiguchi

    IMEC, Belgium

    4 publications · 172 citations

    4

    h-index

  4. HY
    Hao Yu

    IMEC, Belgium

    4 publications · 172 citations

    4

    h-index

  5. KD
    K. De Meyer

    IMEC, Belgium

    4 publications · 172 citations

    4

    h-index

1–5 of 360

Venues

  1. 12

    h-index

  2. Applied Physics Letters

    7 publications · 193 citations

    7

    h-index

  3. IEEE Transactions on Electron Devices

    6 publications · 211 citations

    6

    h-index

  4. Journal of Applied Physics

    5 publications · 118 citations

    5

    h-index

  5. Journal of The Electrochemical Society

    JES · 4 publications · 146 citations

    4

    h-index

1–5