Pre-amorphization Implantation
Pre-Amorphization Implantation is a semiconductor fabrication technique that involves the intentional implantation of heavy ions to create an amorphous layer in a crystalline substrate prior to subsequent dopant implantation, thereby minimizing channeling effects and enhancing dopant activation uniformity.
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Pre-amorphization damage in ion-implanted silicon
R.J. Schreutelkamp, J. S. Custer, J.R. Liefting et al. · Materials Science Reports · 1991 · 135 citations
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IMEC
Leuven, Belgium
8 h-index
62 publications
2.5K citations

Chinese Academy of Sciences
Beijing, China
5 h-index
17 publications
301 citations
KU Leuven
Leuven, Belgium
5 h-index
12 publications
416 citations
Samsung (South Korea)
Seoul, South Korea
4 h-index
30 publications
1.1K citations
Institute of Microelectronics
Beijing, China
4 h-index
21 publications
347 citations

Centre National de la Recherche Scientifique
Paris, France
4 h-index
17 publications
352 citations
Applied Materials (United States)
Santa Clara, United States
3 h-index
11 publications
242 citations
Centre d’Élaboration de Matériaux et d’Études Structurales
Toulouse, France
3 h-index
15 publications
204 citations
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JES · 4 publications · 146 citations
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