Three-step amorphisation process in ion-implanted GaN at 15 K

Damage buildup in GaN under ion bombardment

S. O. Kucheyev, J. S. Williams, C. Jagadish et al. · Physical review. B, Condensed matter · 2000 · 192 citations

Engineering, Materials Engineering, Materials Science +17

Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization

C. Liu, B. Mensching, M. Zeitler et al. · Physical review. B, Condensed matter · 1998 · 129 citations · Full text

Engineering, Materials Science, Physics +17

Axial dechanneling

Konrad Gärtner, K. Hehl, Gerald Schlotzhauer · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1984 · 88 citations

Two-beam irradiation chamber for in situ ion-implantation and RBS at temperatures from 15 K to 300 K

B Breeger, E. Wendler, W. Trippensee et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2001 · 61 citations

Engineering, Nuclear Engineering, Radiation Physics +2

Axial dechanneling

Konrad Ga ̈rtner, K. Hehl, Gerald Schlotzhauer · Nuclear Instruments and Methods in Physics Research · 1983 · 61 citations