E. Wendler

Ion-beam induced damage and annealing behaviour in SiC

E. Wendler, A. Heft, W. Wesch · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1998 · 197 citations

Materials Engineering, Electrical Engineering, Ion Implantation +5

Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

C. Jeynes, N.P. Barradas, Paul Marriott et al. · Journal of Physics D Applied Physics · 2003 · 183 citations

Critical review of the current status of thickness measurements for ultrathin SiO ₂ on Si Part V: Results of a CCQM pilot study

M. P. Seah, Steven J. Spencer, Farid Bensebaa et al. · Surface and Interface Analysis · 2004 · 139 citations

Effect of high electronic energy deposition in semiconductors

W. Wesch, A. Kamarou, E. Wendler · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2004 · 135 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +4

Study of silver diffusion in silicon carbide

E. Friedland, J.B. Malherbe, N.G. van der Berg et al. · Journal of Nuclear Materials · 2009 · 117 citations

Materials Science, Materials Engineering, Engineering +5