A. Heft

Ion-beam induced damage and annealing behaviour in SiC

E. Wendler, A. Heft, W. Wesch · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1998 · 197 citations

Materials Engineering, Electrical Engineering, Ion Implantation +5

High temperature ion implantation of silicon carbide

W. Wesch, A. Heft, E. Wendler et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1995 · 43 citations

Materials Engineering, Ion Implantation, Engineering +4

Defect production and annealing in ion implanted silicon carbide

A. Heft, E. Wendler, T. Bachmann et al. · Materials Science and Engineering B · 1995 · 43 citations

Materials Engineering, Electrical Engineering, Ion Implantation +6

Damage production and annealing of ion implanted silicon carbide

A. Heft, E. Wendler, J. Heindl et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 42 citations

Materials Science, Materials Engineering, Electrical Engineering +7

Characterization of SiO2 thin films prepared by plasma-activated chemical vapour deposition

Andreas Pfuch, A. Heft, R. Weidl et al. · Surface and Coatings Technology · 2005 · 38 citations

Materials Science, Engineering, Silicon On Insulator +8