High temperature ion implantation of silicon carbide

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

R. F. Davis, Zlatko Sitar, B. Williams et al. · Materials Science and Engineering B · 1988 · 236 citations

Engineering, Materials Science, Physics +17

Ion implantation effects in silicon carbide

C.J. McHargue, J.M. Williams · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1993 · 190 citations

Engineering, Materials Engineering, Materials Science +11

Axial dechanneling

Konrad Gärtner, K. Hehl, Gerald Schlotzhauer · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1984 · 88 citations

Axial dechanneling

Konrad Ga ̈rtner, K. Hehl, Gerald Schlotzhauer · Nuclear Instruments and Methods in Physics Research · 1983 · 61 citations

Axial dechanneling

Konrad Gärtner, K. Hehl, Gerald Schlotzhauer · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1984 · 42 citations