R. Gregory

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan et al. · Journal of The Electrochemical Society · 2004 · 165 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +18

Optical properties of bulk and thin-film SrTiO3 on Si and Pt

Stefan Zollner, Alexander A. Demkov, R. Liu et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 118 citations · Full text

Optical Materials, Engineering, Thin-film Srtio3 +17

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

J. Schaeffer, S. Samavedam, D. C. Gilmer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 100 citations

Engineering, Electrical Properties, Gate Dielectric +18

Impact of Zr addition on properties of atomic layer deposited HfO2

Dina H. Triyoso, R. I. Hegde, J. K. Schaeffer et al. · Applied Physics Letters · 2006 · 84 citations

Engineering, Zr Addition, Atomic Layer +16

High mobility NMOSFET structure with high-/spl kappa/ dielectric

M. Passlack, Ravi Droopad, K. Rajagopalan et al. · IEEE Electron Device Letters · 2005 · 79 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11