J. K. Schaeffer

Impact of Zr addition on properties of atomic layer deposited HfO2

Dina H. Triyoso, R. I. Hegde, J. K. Schaeffer et al. · Applied Physics Letters · 2006 · 84 citations

Engineering, Zr Addition, Atomic Layer +16

HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium

J. K. Schaeffer, N. V. Edwards, Rui Liu et al. · Journal of The Electrochemical Society · 2003 · 60 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +14

Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

Dina H. Triyoso, R. I. Hegde, J. K. Schaeffer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 53 citations

Materials Science, Semiconductor Device, Engineering +13

Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition

Dina H. Triyoso, R. I. Hegde, J. M. Grant et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2005 · 45 citations

Engineering, Thin Film Process Technology, Semiconductor Device +18

Process-dependent defects in Si∕HfO2∕Mo gate oxide heterostructures

Sean Walsh, L. Fang, J. K. Schaeffer et al. · Applied Physics Letters · 2007 · 43 citations

Oxide Heterostructures, Process-dependent Defects, Engineering +15