K. Rajagopalan

Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

Richard J. Hill, David A. J. Moran, Xu Li et al. · IEEE Electron Device Letters · 2007 · 170 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

High mobility NMOSFET structure with high-/spl kappa/ dielectric

M. Passlack, Ravi Droopad, K. Rajagopalan et al. · IEEE Electron Device Letters · 2005 · 79 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Enhancement-Mode GaAs n-Channel MOSFET

K. Rajagopalan, J. Abrokwah, Ravi Droopad et al. · IEEE Electron Device Letters · 2006 · 66 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +8

High Mobility III-V MOSFETs For RF and Digital Applications

M. Passlack, A. Zlotnicka, P. Fejes et al. · 2007 · 58 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +13

1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

K. Rajagopalan, Ravi Droopad, J. Abrokwah et al. · IEEE Electron Device Letters · 2007 · 51 citations

Semiconductor Technology, Electrical Engineering, Engineering +8