P. Fejes

High Mobility III-V MOSFETs For RF and Digital Applications

M. Passlack, A. Zlotnicka, P. Fejes et al. · 2007 · 58 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +13

1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

K. Rajagopalan, Ravi Droopad, J. Abrokwah et al. · IEEE Electron Device Letters · 2007 · 51 citations

Semiconductor Technology, Electrical Engineering, Engineering +8

Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

M. Passlack, Ravi Droopad, P. Fejes et al. · IEEE Electron Device Letters · 2008 · 38 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13

The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p/sup +/-gate p-channel MOSFETs with fluorine incorporation

Hsin Tseng, Philip J. Tobin, F.K. Baker et al. · IEEE Transactions on Electron Devices · 1992 · 37 citations

Threshold Voltage Instabilities, Semiconductor Technology, Electrical Engineering +12

1 µm gate length, In _0.75 Ga _0.25 As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm

Richard J. Hill, Ravi Droopad, David A. J. Moran et al. · Electronics Letters · 2008 · 26 citations