P. Fejes - Concepedia

Author

P. Fejes

Motorola (United States)

Also Known As

P Fejes, P. Fejes, P. L. Fejes, P.L. Fejes, PL Fejes

Publications

296

Citations

H-Index

Concepts

All Affiliations

Motorola (United States)University of Glasgow

About

P. Fejes is an author at Motorola (United States) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	213
2	Applied Physics	6	6	213
3	Electrical Engineering	5	5	201
4	Materials Engineering	1	1	12
5	Materials Science	1	1	12

P. Fejes

Publications

253

Citations

H-Index

Page 1

	Year	Citations
High Mobility III-V MOSFETs For RF and Digital Applications M. Passlack, A. Zlotnicka, P. Fejes, Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringRf Semiconductor	2007	58
1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm K. Rajagopalan, Ravi Droopad, J. Abrokwah, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringElectronic EngineeringApplied Physics	2007	51
Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs M. Passlack, Ravi Droopad, P. Fejes, IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringGdgao Cap DielectricsEngineering	2008	38
The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p/sup +/-gate p-channel MOSFETs with fluorine incorporation Hsin Tseng, Philip J. Tobin, F.K. Baker, IEEE Transactions on Electron Devices Threshold Voltage InstabilitiesSemiconductor TechnologyElectrical EngineeringEngineeringFluorine Incorporation	1992	37
1 µm gate length, In <sub>0.75</sub> Ga <sub>0.25</sub> As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm Richard J. Hill, Ravi Droopad, David A. J. Moran, Electronics Letters	2008	26
High Mobility III-V Mosfet Technology M. Passlack, Ravi Droopad, K. Rajagopalan, SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringGaas Mos Technology	2006	17
The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in BF<sub>2</sub> implanted P+ gate p-channel MOSFETs Hsing-Huang Tseng, Philip J. Tobin, F.K. Baker,	1990	14
Oxygen precipitation in antimony-doped silicon wafers F. Secco d’Aragona, P. Fejes Applied Physics Letters Materials EngineeringMaterials ScienceSemiconductor TechnologyOxygen ConcentrationEngineering	1986	12

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