F.K. Baker

The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

J.R. Pfiester, F.K. Baker, T.C. Mele et al. · IEEE Transactions on Electron Devices · 1990 · 211 citations

Engineering, Electrical Engineering, Materials Science +17

The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs

F.K. Baker, J.R. Pfiester, T.C. Mele et al. · 2003 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

A physical model for boron penetration through thin gate oxides from p/sup +/ polysilicon gates

J.R. Pfiester, L.C. Parrillo, F.K. Baker · IEEE Electron Device Letters · 1990 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

An integrated silicon photonics technology for O-band datacom

N. Feilchenfeld, Frederick G Anderson, Tymon Barwicz et al. · 2015 · 42 citations

Engineering, Electrical Engineering, Optoelectronics +15

The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p/sup +/-gate p-channel MOSFETs with fluorine incorporation

Hsin Tseng, Philip J. Tobin, F.K. Baker et al. · IEEE Transactions on Electron Devices · 1992 · 37 citations

Engineering, Electrical Engineering, Materials Science +17