Foundation of rf CMOS and SiGe BiCMOS technologies

J. Dunn, D. Ahlgren, Douglas Coolbaugh, +19

IBM Journal of Research and Development

Electrical EngineeringIbm Sige BicmosEngineeringVlsi DesignRadio Frequency +11

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

Alvin Joseph, D.L. Harame, B. Jagannathan, +8

Proceedings of the IEEE

EngineeringCommunication InterfaceSige Bicmos WlCommunication CircuitTransmission System +17

An integrated silicon photonics technology for O-band datacom

N. Feilchenfeld, Frederick G Anderson, Tymon Barwicz, +42

O-band DatacomEngineeringDevice IntegrationIntegrated PhotonicsGb/s Reference Design +15

A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration

Rainer Minixhofer, N. Feilchenfeld, M. Knaipp, +16

International Symposium on Power Semiconductor Devices and IC's

Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignHigh Voltage Engineering +11

Monolithic Silicon Photonics at 25 Gb/s

Jason S. Orcutt, D. M. Gill, Jonathan E. Proesel, +20

Optical Fiber Communication Conference

EngineeringVlsi DesignIntegrated PhotonicsDevice IntegrationIntegrated Circuits +14

Silicon photonics and challenges for fabrication

N. Feilchenfeld, Karen Nummy, Tymon Barwicz, +22

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

PhotonicsOptical InterconnectsEngineeringIntegrated PhotonicsMicrofabrication +12

The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness

Steven H. Voldman, E. Gebreselasic, L. Lanzerotti, +4

Low-power ElectronicsElectrical EngineeringNew TechnologiesEngineeringVlsi Design +9

A low complexity 0.13 μ SiGe BiCMOS technology for wireless and mixed signal applications

L. Lanzerotti, N. Feilchenfeld, Douglas Coolbaugh, +25

Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignLow Complexity 0.13 +11

Latchup in merged triple well structure

Steven H. Voldman, E. Gebreselasic, M. Zierak, +5

3D Ic ArchitectureElectrical EngineeringIsolated MosfetEngineeringVlsi Design +8

A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 μm L/sub ett/ CMOS

St. Onge, D.L. Harame, James Dunn, +21