Rainer Minixhofer

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Stanislav Tyaginov, Ivan A. Starkov, O. Triebl et al. · Microelectronics Reliability · 2010 · 57 citations

Device Modeling, Engineering, Physics +10

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer et al. · IEEE Transactions on Electron Devices · 2015 · 39 citations · Full text

Device Modeling, Electrical Engineering, Hot-carrier Degradation +14

A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration

Rainer Minixhofer, N. Feilchenfeld, M. Knaipp et al. · International Symposium on Power Semiconductor Devices and IC's · 2010 · 34 citations

Low-power Electronics, Electrical Engineering, Engineering +13

Hot-carrier degradation modeling using full-band Monte-Carlo simulations

Stanislav Tyaginov, Ivan A. Starkov, O. Triebl et al. · 2010 · 26 citations

TCAD Modeling of Negative Bias Temperature Instability

Tibor Grasser, R. Entner, O. Triebl et al. · 2006 · 24 citations

Engineering, Semiconductor Device, Stability +20