Bernhard Stampfer

A Physical Model for the Hysteresis in MoS₂ Transistors

Theresia Knobloch, G. Rzepa, Yu. Yu. Illarionov et al. · IEEE Journal of the Electron Devices Society · 2018 · 77 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Characterization of Single Defects in Ultrascaled MoS_<b>2</b> Field-Effect Transistors

Bernhard Stampfer, Feng Zhang, Yu. Yu. Illarionov et al. · ACS Nano · 2018 · 74 citations

Engineering, Materials Science, Physics +17

Toward Automated Defect Extraction From Bias Temperature Instability Measurements

Dominic Waldhoer, Christian Schleich, Jakob Michl et al. · IEEE Transactions on Electron Devices · 2021 · 39 citations

Engineering, Electrical Engineering, Electronic Materials +16

Efficient physical defect model applied to PBTI in high-κ stacks

G. Rzepa, J. Franco, A. Subirats et al. · 2017 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

Jakob Michl, Alexander Grill, Bernhard Stampfer et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 26 citations

Engineering, Electrical Engineering, Physics +17