J.R. Pfiester

The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

J.R. Pfiester, F.K. Baker, T.C. Mele et al. · IEEE Transactions on Electron Devices · 1990 · 211 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical properties of heavily doped polycrystalline silicon-germanium films

Tsu‐Jae King, J.P. McVittie, Krishna C. Saraswat et al. · IEEE Transactions on Electron Devices · 1994 · 135 citations

Engineering, Materials Engineering, Materials Science +17

A polycrystalline-Si/sub 1-x/Ge/sub x/-gate CMOS technology

Tsu‐Jae King, J.R. Pfiester, J. Shott et al. · 2002 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

A variable-work-function polycrystalline-Si/sub 1-x/Ge/sub x/ gate material for submicrometer CMOS technologies

Tsu‐Jae King, J.R. Pfiester, Krishna C. Saraswat · IEEE Electron Device Letters · 1991 · 55 citations

Engineering, Electrical Engineering, Materials Science +16

The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs

F.K. Baker, J.R. Pfiester, T.C. Mele et al. · 2003 · 54 citations

Engineering, Electrical Engineering, Materials Science +17