IEEE Electron Device Letters · 1991 · 55 citations · 6 references
Electrical EngineeringEngineeringVlsi DesignMicrofabricationNanoelectronicsVlsi ArchitectureApplied PhysicsElectronic CircuitSemiconductor Device FabricationSubmicrometer Cmos TechnologiesIntegrated CircuitsSilicon On InsulatorMicroelectronicsGe ContentPoly-si/sub 1-X/ge/sub X/
P/sup +/ poly-Si/sub 1-x/Ge/sub x/ is a promising candidate for the gate material in submicrometer CMOS technologies due to its improved resistivity and its work function (which can be modified to achieve more-scalable NMOS and PMOS devices). The work function of P/sup +/ poly-Si/sub 1-x/Ge/sub x/ decreases with increasing Ge content, by more than 0.3 V from 0 to 60%. Because of its ease of formation and compatibility with VLSI fabrication techniques, assimilating poly-Si/sub 1-x/Ge/sub x/ into an existing CMOS process should be relatively simple.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
6
VLSI Process modeling&#8212;SUPREM III
Chu Po Ho, J.D. Plummer, Stephen Hansen et al. · IEEE Transactions on Electron Devices · 1983 · 229 citations
C. A. King, Judy L. Hoyt, J. F. Gibbons · IEEE Transactions on Electron Devices · 1989 · 164 citations
Reverse Leakage Currents, Electrical Engineering, Engineering +11
A symmetric submicron CMOS technology
S.J. Hillenius, R. Liu, G. E. Georgiou et al. · 1986 · 66 citations