C. A. King

Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing

C. A. King, Judy L. Hoyt, C. M. Gronet et al. · IEEE Electron Device Letters · 1989 · 171 citations

Engineering, Electrical Engineering, Materials Science +17

Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

C. A. King, Judy L. Hoyt, J. F. Gibbons · IEEE Transactions on Electron Devices · 1989 · 165 citations

Engineering, Electrical Engineering, Materials Science +17

Reduction in misfit dislocation density by the selective growth of Si1−<i>x</i>Ge<i>x</i>/Si in small areas

D. B. Noble, Judy L. Hoyt, C. A. King et al. · Applied Physics Letters · 1990 · 103 citations

Engineering, Materials Engineering, Materials Science +17

Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

T. I. Kamins, K. Nauka, J.B. Kruger et al. · IEEE Electron Device Letters · 1989 · 66 citations

Engineering, Electrical Engineering, Materials Science +15

Growth of GeSi/Si strained-layer superlattices using limited reaction processing

C. M. Gronet, C. A. King, W. G. Opyd et al. · Journal of Applied Physics · 1987 · 62 citations · Full text

Engineering, Materials Engineering, Materials Science +10