W. G. Opyd

Growth of GeSi/Si strained-layer superlattices using limited reaction processing

C. M. Gronet, C. A. King, W. G. Opyd et al. · Journal of Applied Physics · 1987 · 62 citations · Full text

Engineering, Materials Engineering, Materials Science +10

Damage calculation and measurement for GaAs amorphized by Si implantation

W. G. Opyd, J. F. Gibbons, J. C. Bravman et al. · Applied Physics Letters · 1986 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Rapid thermal annealing of Si-implanted GaAs with trimethylarsenic overpressure

S. Reynolds, D. Vook, W. G. Opyd et al. · Applied Physics Letters · 1987 · 33 citations

Engineering, Materials Engineering, Materials Science +15

Thermal pulse annealing of boron-implanted HgCdTe

Kaitlynn Conway, W. G. Opyd, Mark E. Greiner et al. · Applied Physics Letters · 1982 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Photoluminescence in strained InGaAs/GaAs superlattices

David A. Dahl, L. J. Dries, F. A. Junga et al. · Journal of Applied Physics · 1987 · 18 citations

Natural Sciences, Materials Science, Physics +17