D. B. Noble

Reduction in misfit dislocation density by the selective growth of Si1−<i>x</i>Ge<i>x</i>/Si in small areas

D. B. Noble, Judy L. Hoyt, C. A. King et al. · Applied Physics Letters · 1990 · 103 citations

Engineering, Misfit Dislocation Density, Optoelectronic Devices +19

Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

T. I. Kamins, K. Nauka, J.B. Kruger et al. · IEEE Electron Device Letters · 1989 · 66 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +11

Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applications

Judy L. Hoyt, C. A. King, D. B. Noble et al. · Thin Solid Films · 1990 · 57 citations

Mechanisms and Kinetics of Misfit Dislocation Formation in Heteroepitaxial Thin Films

William D. Nix, D. B. Noble, J. F. Turlo · MRS Proceedings · 1990 · 40 citations

Materials Science, Engineering, Dislocation Interaction +9

Thermal stability of Si/Si1−<i>x</i>Ge<i>x</i>/Si heterojunction bipolar transistor structures grown by limited reaction processing

D. B. Noble, Judy L. Hoyt, J. F. Gibbons et al. · Applied Physics Letters · 1989 · 39 citations

Materials Science, Layer Thickness, Electrical Engineering +12