T.C. Mele

The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

J.R. Pfiester, F.K. Baker, T.C. Mele et al. · IEEE Transactions on Electron Devices · 1990 · 211 citations

Engineering, Electrical Engineering, Materials Science +17

The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs

F.K. Baker, J.R. Pfiester, T.C. Mele et al. · 2003 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Selective and anisotropic reactive ion etch of LPCVD silicon nitride with CHF3 based gases

T.C. Mele, J. Nulman, J.P. Krusius · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 32 citations

Engineering, Materials Engineering, Materials Science +17

A high-performance 0.5- mu m BiCMOS technology for fast 4-Mb SRAMs

J.D. Hayden, T.C. Mele, A.H. Perera et al. · IEEE Transactions on Electron Devices · 1992 · 19 citations

Engineering, Computer Engineering, Electrical Engineering +15

A high performance 0.5 mu m BiCMOS triple polysilicon technology for 4 Mb fast SRAMs

T.C. Mele, J.D. Hayden, F.W. Walczyk et al. · 2002 · 17 citations

Engineering, Computer Engineering, Electrical Engineering +16