J.D. Hayden

The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

J.R. Pfiester, F.K. Baker, T.C. Mele et al. · IEEE Transactions on Electron Devices · 1990 · 211 citations

Electrical Engineering, Polysilicon Gate, Engineering +13

The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs

F.K. Baker, J.R. Pfiester, T.C. Mele et al. · 2003 · 54 citations

Threshold Voltage Instabilities, Semiconductor Technology, Electrical Engineering +12

A comparison of base current reversal and bipolar snapback in advanced n-p-n bipolar transistors

J.D. Hayden, David C. Burnett, J. Nangle · IEEE Electron Device Letters · 1991 · 27 citations

Electrical Engineering, Engineering, Bipolar Snapback +7

Trench isolation for 0.45 μm active pitch and below

A.H. Perera, Jung‐Hui Lin, Yao-Ching Ku et al. · 2002 · 23 citations

Aeroacoustics, Electrical Engineering, Semiconductor Device +13

Characterization and elimination of trench dislocations

John Damiano, C.K. Subramanian, Mark Gibson et al. · 2002 · 23 citations

Engineering, Mechanical Engineering, Integrated Circuits +16