Philip J. Tobin

Thermodynamic stability of high-<i>K</i> dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

Maciej Gutowski, John E. Jaffe, Chunli Liu et al. · Applied Physics Letters · 2002 · 363 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Contributions to the effective work function of platinum on hafnium dioxide

J. Schaeffer, L. R. C. Fonseca, S. Samavedam et al. · Applied Physics Letters · 2004 · 194 citations

Materials Science, Electrical Engineering, Engineering +12

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan et al. · Journal of The Electrochemical Society · 2004 · 165 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +18

Crystallization in hafnia‐ and zirconia‐based systems

Sergey V. Ushakov, Alexandra Navrotsky, Yingju Yang et al. · physica status solidi (b) · 2004 · 162 citations

Materials Science, Materials Engineering, High Temperature Materials +12

Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

Rama I. Hegde, Philip J. Tobin, K. Reid et al. · Applied Physics Letters · 1995 · 139 citations

Engineering, Nitric Oxide, Optoelectronic Devices +18