Rama I. Hegde

Thermodynamic stability of high-<i>K</i> dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

Maciej Gutowski, John E. Jaffe, Chunli Liu et al. · Applied Physics Letters · 2002 · 363 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

Rama I. Hegde, Philip J. Tobin, K. Reid et al. · Applied Physics Letters · 1995 · 139 citations

Engineering, Nitric Oxide, Optoelectronic Devices +18

Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O

Yoshio Okada, Philip J. Tobin, Vikas Lakhotia et al. · Applied Physics Letters · 1993 · 84 citations

Chemical Engineering, Electrical Engineering, N2o Oxynitrides +8

Thin film properties of low-pressure chemical vapor deposition TiN barrier for ultra-large-scale integration applications

Rama I. Hegde, R. Fiordalice, E. Travis et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 83 citations

Engineering, Oxidation Resistance, Thin Film Process Technology +20

Growth and Film Characteristics of  N 2 O  and NO Oxynitride Gate and Tunnel Dielectrics

Rama I. Hegde, B. Maiti, Philip J. Tobin · Journal of The Electrochemical Society · 1997 · 51 citations

Engineering, Nitric Oxide, Thin Film Process Technology +17