1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

Abstract

In this letter, 1-mum GaAs-based enhancement-mode n-channel devices with channel mobility of 5500 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vmiddots and g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> exceeding 250 mS/mm have been fabricated. The measured device parameters including threshold voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> , maximum extrinsic transconductance g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> , saturation current I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dss </sub> , on-resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> , and gate current are 0.11 V, 254 mS/mm, 380 mA/mm, 4.5 Omegamiddotmm, and < 56 pA for a first wafer and 0.08 V, 229 mS/mm, 443 mA/mm, 4.5 Omegamiddotmm, and < 90 pA for a second wafer, respectively. With an intrinsic transconductance g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mi</sub> of 434 mS/mm, GaAs enhancement-mode MOSFETs have reached expected intrinsic device performance