J. Abrokwah

Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

Richard J. Hill, David A. J. Moran, Xu Li et al. · IEEE Electron Device Letters · 2007 · 170 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

M. Passlack, J. Abrokwah, Ravi Droopad et al. · IEEE Electron Device Letters · 2002 · 87 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

High mobility NMOSFET structure with high-/spl kappa/ dielectric

M. Passlack, Ravi Droopad, K. Rajagopalan et al. · IEEE Electron Device Letters · 2005 · 79 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Zhiyi Yu, C. Overgaard, Ravi Droopad et al. · Applied Physics Letters · 2003 · 74 citations

Materials Science, Semiconductors, Electrical Engineering +15

Enhancement-Mode GaAs n-Channel MOSFET

K. Rajagopalan, J. Abrokwah, Ravi Droopad et al. · IEEE Electron Device Letters · 2006 · 66 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +8