Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

Richard J. Hill, David A. J. Moran, Xu Li, +10

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEnhancement-mode Gaas MosfetsEngineering +10

Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

M. Passlack, J. Abrokwah, Ravi Droopad, +6

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering +10

High mobility NMOSFET structure with high-/spl kappa/ dielectric

M. Passlack, Ravi Droopad, K. Rajagopalan, +2

IEEE Electron Device Letters

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor +9

Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Zhiyi Yu, C. Overgaard, Ravi Droopad, +2

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringMolecular-beam EpitaxyEngineering +13

Enhancement-Mode GaAs n-Channel MOSFET

K. Rajagopalan, J. Abrokwah, Ravi Droopad, +1

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering +6

Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE

B. J. Skromme, T. S. Low, Thomas Roth, +3

Journal of Electronic Materials

SemiconductorsSemiconductor TechnologyElectrical EngineeringResidual DonorsEngineering +4

High Mobility III-V MOSFETs For RF and Digital Applications

M. Passlack, A. Zlotnicka, P. Fejes, +17

Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringRf Semiconductor +11

Planar monolithic integration of a photodiode and a GaAs preamplifier

R. M. Kolbas, J. Abrokwah, J. K. Carney, +3

Applied Physics Letters

Planar Monolithic IntegrationEngineeringDevice IntegrationPin PhotodiodeRf Semiconductor +14

1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

K. Rajagopalan, Ravi Droopad, J. Abrokwah, +3

IEEE Electron Device Letters

Semiconductor TechnologyElectrical EngineeringEngineeringElectronic EngineeringApplied Physics +6

Compact Harmonic Filter Design and Fabrication Using IPD Technology

Lianjun Liu, Shun-Meen Kuo, J. Abrokwah, +3

IEEE Transactions on Components and Packaging Technologies

Electrical EngineeringEngineeringIntegrated Passive DeviceHigh-frequency DeviceElectronic Engineering +12