O. Adetutu

Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack

H.‐H. Tseng, C. Capasso, J. Schaeffer et al. · 2005 · 35 citations

Engineering, Electrical Engineering, Materials Science +16

PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology

B. Maiti, Philip J. Tobin, Chris Hobbs et al. · 2002 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

S. Samavedam, L.B. La, Philip J. Tobin et al. · 2004 · 20 citations

Engineering, Electrical Engineering, Physics +17

Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics

D. C. Gilmer, C. Hobbs, R. I. Hegde et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 18 citations

Natural Sciences, Electrical Engineering, Materials Science +15

Defect passivation with fluorine in a Ta/sub x/C/ high-K gate stack for enhanced device threshold voltage stability and performance

H.‐H. Tseng, P.J. Tobin, E.A. Hebert et al. · 2006 · 17 citations

Engineering, Electrical Engineering, Materials Science +15