E.A. Hebert

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 224 citations

Engineering, Electrical Engineering, Materials Science +17

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

Dina H. Triyoso, R. I. Hegde, J. K. Schaeffer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2007 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +14

Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack

H.‐H. Tseng, C. Capasso, J. Schaeffer et al. · 2005 · 35 citations

Engineering, Electrical Engineering, Materials Science +16

Defect passivation with fluorine in a Ta/sub x/C/ high-K gate stack for enhanced device threshold voltage stability and performance

H.‐H. Tseng, P.J. Tobin, E.A. Hebert et al. · 2006 · 17 citations

Engineering, Electrical Engineering, Materials Science +15