Publication | Closed Access
Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]
20
Citations
6
References
2004
Year
Unknown Venue
Semiconductor TechnologyElectrical EngineeringMetal/dielectric InterfaceEngineeringPhysicsTopological HeterostructuresNanoelectronicsApplied PhysicsCondensed Matter PhysicsTin GatesMultilayer HeterostructuresSemiconductor Device FabricationFermi LevelMicroelectronicsInterface StructureInterconnect (Integrated Circuits)Semiconductor DeviceFermi Level Pinning
We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO/sub 2/, Al/sub 2/O/sub 3/ and HfO/sub 2/ for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.
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