Alex Demkov - Concepedia

Author

Alex Demkov

Motorola (United States)

Also Known As

A Demkov, A. A. Demkov, A. Demkov, A.A. Demkov, Alex Demkov, Demkov, A.

Publications

445

Citations

H-Index

Concepts

All Affiliations

Motorola (United States)The University of Texas at Austin Pennsylvania State University Radiation Oncology Associates

About

Alex Demkov is an author at Motorola (United States) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	413
2	Applied Physics	9	9	413
3	Electrical Engineering	3	3	118
4	Chemical Engineering	1	1	56
5	Chemistry	1	1	10

Alex Demkov

Publications

413

Citations

H-Index

Page 1

	Year	Citations
Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO3 films Yi Wei, Xiaoming Hu, Yong Liang, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceSemiconductorsOxide HeterostructuresOrdered SiSro-terminated Ordered Si	2002	108
Development of integrated heterostructures on silicon by MBE Ravi Droopad, Zhiyi Yu, Hao Li, Journal of Crystal Growth EngineeringNanoelectronicsApplied PhysicsIntegrated HeterostructuresMultilayer Heterostructures	2003	69
Challenges in Ceramic Science: A Report from the Workshop on Emerging Research Areas in Ceramic Science Gregory S. Rohrer, Mario Affatigato, Monika Backhaus, Journal of the American Ceramic Society EngineeringMechanical EngineeringFunctional CeramicCeramic MicrostructuresCeramic Powders	2012	65
Ge(001) surface cleaning methods for device integration Patrick Ponath, Agham Posadas, Alex Demkov Applied Physics Reviews EngineeringDevice IntegrationGe SurfaceClean Ge SurfaceGe Nanodevices	2017	56
Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- $k$ Gate Stacks G. Bersuker, Chang Seo Park, Huang-Chun Wen, IEEE Transactions on Electron Devices Gate StacksFlatband-voltage Roll-off PhenomenonElectrical EngineeringElectronic DevicesOxygen Vacancies	2010	42
Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy Alex Demkov, Hosung Seo, X. Zhang, Applied Physics Letters Z-k Wetting LayerEngineeringCovalent SemiconductorsSemiconductorsIi-vi Semiconductor	2012	24
Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs] S. Samavedam, L.B. La, Philip J. Tobin, Semiconductor TechnologyElectrical EngineeringMetal/dielectric InterfaceEngineeringPhysics	2004	20
Ultraviolet-Raman studies of SrTiO3 ultrathin films on Si L. Hilt Tisinger, R. Liu, J. Kulik, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceOxide HeterostructuresPhonon ModesMaterial AnalysisEngineering	2002	19
Displacement of surface arsenic atoms by insertion of oxygen atoms into As–Ga backbonds Jonathan Z. Sexton, Seho Yi, M. J. Hale, The Journal of Chemical Physics Relative StabilitiesEngineeringChemistryElectronic StructureSemiconductor Nanostructures	2003	10

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