Concepedia
Statistics
Publications
25
Citations
945
H-Index
16
Active since
1999
Affiliations
Motorola (United States)(Current)
University of Florida
GlobalFoundries (United States)
University at Albany, State University of New York
Micro and Nanotechnology Innovation Centre
C. Hobbs is an author at Motorola (United States) specializing in engineering, materials science, and electrical engineering.
Publications per year
1999–2013
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)
Tonya M. Klein, Dongfang Niu, William S. Epling et al. · Applied Physics Letters · 1999 · 203 citations
Natural Sciences, Chemistry, Materials Science +17
Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]
Dina H. Triyoso, R. Liu, D. Roan et al. · Journal of The Electrochemical Society · 2004 · 167 citations
Natural Sciences, Materials Engineering, Materials Science +17
Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics
D. C. Gilmer, R. I. Hegde, R. Cotton et al. · Applied Physics Letters · 2002 · 79 citations
Engineering, Electrical Engineering, Materials Science +17
Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
Tiezhong Ma, Stephen A. Campbell, Ryan C. Smith et al. · IEEE Transactions on Electron Devices · 2001 · 57 citations
Engineering, Materials Engineering, Materials Science +17
300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (X<inf>j</inf>&#x223C;5nm) formed with molecular monolayer doping technique
K.-W. Ang, Joel Barnett, W.Y. Loh et al. · 2011 · 46 citations
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