Journal of Telecommunications and Information Technology · 2007 · 24 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyIii-v SemiconductorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsChannel Length ScalingPower MosfetsSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesUnit Cell GeometryVertical Power DevicesWide Bandgap Semiconductor Applications
The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results from the lateral and vertical devices with varying size from single cell to 3×3 mm2 large devices are reviewed. The vertical devices had hexagonal and square unit cell designs with 2 μm and 4 μm channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.
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SiC MOS interface characteristics
D.M. Brown, M. Ghezzo, J. Kretchmer et al. · IEEE Transactions on Electron Devices · 1994 · 70 citations
Reducing Planar Defects in 3C–SiC
Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara et al. · Chemical Vapor Deposition · 2006 · 67 citations