Valeri Afanas’ev - Concepedia

Author

Valeri Afanas’ev

Also Known As

Afanas'ev, Valeri, V. P. Afanas′ev, V. V. Afanas’ev, Valeri Afanas'ev, Valeri Afanasʼev, Valeri Afanas’Ev, Valeri Afanas’ev, Valeri V Afanas’ev, Valeri V. Afanas'ev, Valeri V. Afanasev

191

Publications

Citations

H-Index

Concepts

All Affiliations

KU Leuven IMEC Friedrich-Alexander-Universität Erlangen-Nürnberg University College London London Centre for Nanotechnology

About

Valeri Afanas’ev is an author at KU Leuven specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	34	1.1K
2	Applied Physics	21	33	1.1K
3	Chemistry	8	8	320
4	Natural Sciences	3	3	113
5	Chemical Engineering	3	3	130

Valeri Afanas’ev

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
The origin of negative charging in amorphous Al<sub>2</sub>O<sub>3</sub> films: the role of native defects Oliver A. Dicks, Jonathon Cottom, Alexander L. Shluger, Nanotechnology	2019	108
Intrinsic charge trapping in amorphous oxide films: status and challenges Jack Strand, Moloud Kaviani, David Gao, Journal of Physics Condensed Matter	2018	85
Ovonic Threshold‐Switching Ge<sub><i>x</i></sub>Se<sub><i>y</i></sub> Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles Sergiu Clima, Daniele Garbin, Karl Opsomer, physica status solidi (RRL) - Rapid Research Letters EngineeringSolid-state ChemistryElectronic StructureCharge TransportTrap Nature	2020	75
Two-Dimensional Crystal Grain Size Tuning in WS<sub>2</sub> Atomic Layer Deposition: An Insight in the Nucleation Mechanism Benjamin Groven, Ankit Nalin Mehta, H. Bender, Chemistry of Materials EngineeringCrystal Growth TechnologyTwo-dimensional MaterialsChemistryChemical Deposition	2018	72
Controlled Sulfurization Process for the Synthesis of Large Area MoS<sub>2</sub> Films and MoS<sub>2</sub>/WS<sub>2</sub> Heterostructures Daniele Chiappe, Inge Asselberghs, Surajit Sutar, Advanced Materials Interfaces Large AreaEngineeringTwo-dimensional MaterialsSolid-state ChemistryChemistry	2015	70
Material-Selective Doping of 2D TMDC through Al<i><sub>x</sub></i>O<i><sub>y</sub></i> Encapsulation Alessandra Leonhardt, Daniele Chiappe, Valeri Afanas’ev, ACS Applied Materials & Interfaces Materials EngineeringMaterials ScienceIi-vi SemiconductorMaterial AnalysisEngineering	2019	63
Observation of Carbon Clusters at the 4H-SiC/SiO<sub>2</sub> Interface Valeri Afanas’ev, A. Stesmans, Chris I. Harris Materials science forum EngineeringApplied PhysicsCondensed Matter PhysicsCarbideCarbon Clusters	1998	59
Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation Florin Ciobanu, Gerhard Pensl, Valeri Afanas’ev, Materials science forum Materials ScienceElectrical EngineeringStandard Oxidation ProcessEngineeringInterface States	2005	55
Traps at the SiC/SiO<sub>2</sub>-Interface Gerhard Pensl, Florin Ciobanu, Valeri Afanas’ev, MRS Proceedings Interface StructureSemiconductor Device FabricationApplied PhysicsSemiconductor Device	2000	55
Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations Al-Moatasem El-Sayed, Matthew B. Watkins, Alexander L. Shluger, Microelectronic Engineering EngineeringBand GapSemiconductor NanostructuresSemiconductorsQuantum Materials	2013	50

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