Valeri Afanas’ev

The origin of negative charging in amorphous Al₂O₃ films: the role of native defects

Oliver A. Dicks, Jonathon Cottom, Alexander L. Shluger et al. · Nanotechnology · 2019 · 108 citations · Full text

Intrinsic charge trapping in amorphous oxide films: status and challenges

Jack Strand, Moloud Kaviani, David Gao et al. · Journal of Physics Condensed Matter · 2018 · 85 citations · Full text

Ovonic Threshold‐Switching Ge_<i>x</i>Se_<i>y</i> Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles

Sergiu Clima, Daniele Garbin, Karl Opsomer et al. · physica status solidi (RRL) - Rapid Research Letters · 2020 · 75 citations · Full text

Engineering, Solid-state Chemistry, Electronic Structure +21

Two-Dimensional Crystal Grain Size Tuning in WS₂ Atomic Layer Deposition: An Insight in the Nucleation Mechanism

Benjamin Groven, Ankit Nalin Mehta, H. Bender et al. · Chemistry of Materials · 2018 · 72 citations · Full text

Engineering, Crystal Growth Technology, Two-dimensional Materials +21

Controlled Sulfurization Process for the Synthesis of Large Area MoS₂ Films and MoS₂/WS₂ Heterostructures

Daniele Chiappe, Inge Asselberghs, Surajit Sutar et al. · Advanced Materials Interfaces · 2015 · 70 citations

Large Area, Engineering, Two-dimensional Materials +17