SiC MOS interface characteristics

Abstract

It is well known that SiC can be thermally oxidized to form SiO/sub 2/ layers. And Si MOSFET IC's using thermally grown SiO/sub 2/ gate dielectrics are the predominant IC technology in the world today. However the SiC/SiO/sub 2/ interface has not been well characterized as was the case for Si MOS in the early 1960's. This paper presents data which for the first time characterizes the SiC/SiO/sub 2/ interface and explains one of the previously unexplained abnormalities observed in the characteristics of SiC MOSFET's.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>