Takamitsu Kawahara

3C-SiC hetero-epitaxial growth on undulant Si(001) substrate

Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara · Journal of Crystal Growth · 2002 · 129 citations

Materials Science, Engineering, Applied Physics +4

Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects

Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi et al. · physica status solidi (b) · 2008 · 92 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Reducing Planar Defects in 3C–SiC

Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara et al. · Chemical Vapor Deposition · 2006 · 66 citations

Materials Science, Semiconductor Technology, Epitaxial Growth +11

Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates

Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi · Materials science forum · 2002 · 59 citations

Materials Engineering, Materials Science, Engineering +6

Hetero- and homo-epitaxial growth of 3C-SiC for MOS-FETs

Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara et al. · Microelectronic Engineering · 2005 · 42 citations

Materials Science, Semiconductor Technology, Engineering +4