Takamitsu Kawahara - Concepedia

Author

Takamitsu Kawahara

Hoya (Japan)

Also Known As

T. Kawahara, Takamitsu KAWAHARA, Takamitsu Kawahara

Publications

566

Citations

H-Index

Concepts

All Affiliations

Hoya (Japan)

About

Takamitsu Kawahara is an author at Hoya (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	512
2	Applied Physics	12	13	512
3	Materials Engineering	6	6	142
4	Electrical Engineering	5	5	157
5	Computer Engineering	1	1	14

Takamitsu Kawahara

Publications

512

Citations

H-Index

Page 1

	Year	Citations
3C-SiC hetero-epitaxial growth on undulant Si(001) substrate Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara Journal of Crystal Growth Materials ScienceEngineeringApplied PhysicsSemiconductor Device FabricationSilicon On Insulator	2002	129
Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, physica status solidi (b) SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2008	92
Reducing Planar Defects in 3C–SiC Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Chemical Vapor Deposition Materials ScienceSemiconductor TechnologyEpitaxial GrowthSf SiEngineering	2006	66
Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi Materials science forum Materials EngineeringMaterials ScienceEngineeringApplied PhysicsHeteroepitaxial Growth	2002	59
Hetero- and homo-epitaxial growth of 3C-SiC for MOS-FETs Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Microelectronic Engineering Materials ScienceSemiconductor TechnologyEngineeringApplied PhysicsMolecular Beam Epitaxy	2005	42
‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Materials science forum Materials EngineeringMaterials ScienceElectrical EngineeringNovel TechniqueEngineering	2006	20
Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Materials science forum Materials ScienceMaterials EngineeringEngineeringApplied PhysicsSemiconductor Device Fabrication	2003	20
High Quality 3C-SiC Substrate for MOSFET Fabrication Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi, Materials science forum Electrical EngineeringEngineeringPhysicsMc SimulationMonte Carlo	2012	17
Determination of densities and energy levels of donors in free-standing undoped 3C–SiC epilayers with thicknesses of 80μm Hideharu Matsuura, Hiroyuki Nagasawa, Kuniaki Yagi, Journal of Applied Physics Materials EngineeringMaterials ScienceSemiconductor TechnologyEngineeringDonor Densities	2004	17
Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC Takamitsu Kawahara, Naoki Hatta, Kuniaki Yagi, Materials science forum Electrical EngineeringSemiconductor DeviceEngineeringLeakage CurrentPhysics	2010	14

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