Kuniaki Yagi - Concepedia

Author

Kuniaki Yagi

Hoya (Japan)

Also Known As

K. Yagi, Kuniaki YAGI, Kuniaki Yagi

Publications

949

Citations

H-Index

Concepts

All Affiliations

Hoya (Japan)The University of Tokyo

About

Kuniaki Yagi is an author at Hoya (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	21	810
2	Applied Physics	16	20	787
3	Chemistry	2	2	33
4	Natural Sciences	1	1	17
5	Computer Engineering	1	1	14

Kuniaki Yagi

Publications

824

Citations

H-Index

Page 1

	Year	Citations
3C-SiC hetero-epitaxial growth on undulant Si(001) substrate Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara Journal of Crystal Growth Materials ScienceEngineeringApplied PhysicsSemiconductor Device FabricationSilicon On Insulator	2002	129
3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates Hiroyuki Nagasawa, Kuniaki Yagi physica status solidi (b) Materials EngineeringMaterials ScienceEngineeringGrowth RateApplied Physics	1997	118
Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi, physica status solidi (b) SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2008	92
Reducing Planar Defects in 3C–SiC Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Chemical Vapor Deposition Materials ScienceSemiconductor TechnologyEpitaxial GrowthSf SiEngineering	2006	66
Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface Chia-Hung Lin, Naoki Hatta, Keita Konishi, Applied Physics Letters Materials ScienceElectrical ResistanceElectrical EngineeringLow ThermalEngineering	2019	64
Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi Materials science forum Materials EngineeringMaterials ScienceEngineeringApplied PhysicsHeteroepitaxial Growth	2002	59
Hetero- and homo-epitaxial growth of 3C-SiC for MOS-FETs Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Microelectronic Engineering Materials ScienceSemiconductor TechnologyEngineeringApplied PhysicsMolecular Beam Epitaxy	2005	42
<i>Ab initio</i> density functional theory calculation of stacking fault energy and stress in 3C‐SiC Yoshitaka Umeno, Kuniaki Yagi, Hiroyuki Nagasawa physica status solidi (b) EngineeringMechanical EngineeringSemiconductorsSf FormationAbstract Stacking Faults	2012	27
29 ps ECL circuits using U-groove isolated SICOS technology T. Shiba, Y. Tamaki, I. Ogiwara, Electrical EngineeringEngineeringHigh-speed ElectronicsPower Semiconductor DeviceMu M	2003	23
‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Materials science forum Materials EngineeringMaterials ScienceElectrical EngineeringNovel TechniqueEngineering	2006	20

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