Kuniaki Yagi

3C-SiC hetero-epitaxial growth on undulant Si(001) substrate

Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara · Journal of Crystal Growth · 2002 · 129 citations

Materials Science, Engineering, Applied Physics +4

3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates

Hiroyuki Nagasawa, Kuniaki Yagi · physica status solidi (b) · 1997 · 118 citations · Full text

Materials Engineering, Materials Science, Engineering +11

Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects

Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi et al. · physica status solidi (b) · 2008 · 92 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Reducing Planar Defects in 3C–SiC

Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara et al. · Chemical Vapor Deposition · 2006 · 66 citations

Materials Science, Semiconductor Technology, Epitaxial Growth +11

Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface

Chia-Hung Lin, Naoki Hatta, Keita Konishi et al. · Applied Physics Letters · 2019 · 64 citations

Materials Science, Electrical Resistance, Electrical Engineering +15