Chia-Hung Lin

Acceptor doping of <i>β</i>-Ga2O3 by Mg and N ion implantations

Man Hoi Wong, Chia-Hung Lin, Akito Kuramata et al. · Applied Physics Letters · 2018 · 191 citations

Materials Engineering, Materials Science, Electrical Engineering +8

Vertical Ga₂O₃ Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

Chia-Hung Lin, Yohei Yuda, Man Hoi Wong et al. · IEEE Electron Device Letters · 2019 · 190 citations

Semiconductor Technology, Electrical Engineering, Ion Implantation +9

Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface

Chia-Hung Lin, Naoki Hatta, Keita Konishi et al. · Applied Physics Letters · 2019 · 64 citations

Materials Science, Electrical Resistance, Electrical Engineering +15

Nitrogen-doped β-Ga₂O₃ vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm² V⁻¹ s⁻¹

Daiki Wakimoto, Chia-Hung Lin, Quang Tu Thieu et al. · Applied Physics Express · 2023 · 27 citations · Full text

Semiconductor Technology, ≥1.3 V, Electrical Engineering +11

Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities

Sandeep Kumar, Takafumi Kamimura, Chia-Hung Lin et al. · Applied Physics Letters · 2020 · 21 citations

Materials Science, Materials Engineering, Electrical Engineering +14